A Precision CMOS Voltage Reference with Enhanced Stability for the Application to Advance VLSIs

A precision CMOS voltage reference circuit is very important for the design of the stable voltage down converter of the high density VLSIs. By using the active mode operation of the component MOS transistors a CMOS bandgap type reference voltage circuit was redesigned for the enhancement of the circuit stability against the internal noises. The voltage supply independence, temperature independence and the stability characteristics of the reference circuit are analyzed by using analytical model. The designed circuit was incorporated into 5V to 3.3V down converter and integrated into a 16M DRAM by using 0.6pm CMOS technology. The measured characteristics of the fabricated voltage down converter shows a voltage dependence of 47.5mV/V and 18ppm/C temperature coefficient at V,, =3.2V and 255ppm/C at V, =5.45V, respectively.